No | Part number | Description ( Function ) | Manufacturers | |
2 | V40170PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier V40170PW www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compli |
Vishay |
|
1 | V40170PW-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V40170PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS® FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of com |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |