Datasheet TMP10N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
4	TMP10N60	Power MOSFET ( Transistor ) Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax ID = 10A RDS(on) = 0.75 W(max) @ VGS= 10 V D G S Device TMP10N60 / TMPF10N60 TMP10N	TRinno
3	TMP10N60A	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.7W D G S Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Pac	TRinno
2	TMP10N60AG	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.7W D G S Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Pac	TRinno
1	TMP10N60G	Power MOSFET ( Transistor ) Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax ID = 10A RDS(on) = 0.75 W(max) @ VGS= 10 V D G S Device TMP10N60 / TMPF10N60 TMP10N	TRinno

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Número de pieza	Descripción	Fabricantes	PDF
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