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TISP2290L PDF Datasheet

The TISP2290L is Dual SymmetrICal Transient Voltage Suppressors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TISP2290L
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

TISP2290L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1990 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘2290L V(Z) V 200 V(BO) V 290 q Planar Passivated Junctions Low Off-State Current

Power Innovations Limited
Power Innovations Limited
pdf

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Recommended search results related to TISP2290L

Part No Description ( Function) Manufacturers PDF
TISP2290   DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

TISP2290 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under

Power Innovations Limited
Power Innovations Limited
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TISP2290F3   DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise

Power Innovations Limited
Power Innovations Limited
datasheet pdf
2SC2290   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficie

Toshiba Semiconductor
Toshiba Semiconductor
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2SC2290   Silicon NPN POWER TRANSISTOR

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD

HGSemi
HGSemi
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2SC2290A   SSB LINEAR POWER AMPLIFIER APPLICATIONS

2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11

Toshiba Semiconductor
Toshiba Semiconductor
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[1]    

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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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