No | Part number | Description ( Function ) | Manufacturers | |
1 | TISP2290L | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS TISP2290L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1990 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘2290L V(Z) V 200 V(BO) V 290 q Planar Passivated Junctions Low Off-State Current |
Power Innovations Limited |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TISP2290L |
Part No | Description ( Function) | Manufacturers | |
TISP2290 | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS TISP2290 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under |
Power Innovations Limited |
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TISP2290F3 | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise |
Power Innovations Limited |
|
2SC2290 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficie |
Toshiba Semiconductor |
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2SC2290 | Silicon NPN POWER TRANSISTOR HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD |
HGSemi |
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2SC2290A | SSB LINEAR POWER AMPLIFIER APPLICATIONS 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11 |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |