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Datasheet TIP112F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIP112F | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) SEMICONDUCTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
U
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
FEATURES
High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117F.
E S
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KEC(Korea Electronics) |
TIP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIP122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
STMicroelectronics |
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TIP120 | Darlington NPN Power Transistors |
TAITRON |
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TIP122 | NPN Epitaxial Darlington Transistor |
Fairchild |
Esta página es del resultado de búsqueda del TIP112F. Si pulsa el resultado de búsqueda de TIP112F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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