No | Part number | Description ( Function ) | Manufacturers | |
17 | TIP106 | Darlington PNP Power Transistors Darlington Power Transistors (PNP) TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted |
TAITRON |
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16 | TIP106 | Power Transistors RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VC |
RECTRON |
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15 | TIP106 | PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Co |
Fairchild Semiconductor |
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14 | TIP106 | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCE |
Motorola Semiconductors |
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13 | TIP106 | Plastic Medium-Power Complementary Silicon Transistors TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min |
ON Semiconductor |
|
12 | TIP106 | POWER TRANSISTORS(8A/60-100V/80W) A A A A |
Mospec Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |