No | Part number | Description ( Function ) | Manufacturers | |
1 | TIM5964-4UL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-4UL HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1d |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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