No | Part number | Description ( Function ) | Manufacturers | |
2 | TIM5964-35SLA | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SLA TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS |
Toshiba Semiconductor |
|
1 | TIM5964-35SLA-251 | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMET |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |