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Datasheet TIM1414-8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | TIM1414-8 | Microwave Power GaAs FET
TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance |
 Toshiba |
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| 2 | TIM1414-8-252 | Microwave Power GaAs FET
DataShee
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Toshiba |
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| 1 | TIM1414-8L | Microwave Power GaAs FET
TOSHIBA
MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 5.0 |
Toshiba |
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