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TIM1414-4A PDF Datasheet

The TIM1414-4A is MICrowave Power Gaas Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TIM1414-4A
Microwave Power GaAs FET

TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression

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Recommended search results related to TIM1414-4A

Part No Description ( Function) Manufacturers PDF
TIM1414-4-252   Microwave Power GaAs FET

DataShee datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com et4U.com datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com

Toshiba
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TIM1414-4LA   MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
TIM1414-4LA   Microwave Power GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE R

Toshiba
Toshiba
datasheet pdf
TIM1414-4LA-371   Microwave Power GaAs FET

DataShee datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com et4U.com datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com

Toshiba
Toshiba
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TIM1414-10A   Microwave Power GAAS Fet

TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed pa

Toshiba
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