No | Part number | Description ( Function ) | Manufacturers | |
1 | TIM1414-4A | Microwave Power GaAs FET TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TIM1414-4A |
Part No | Description ( Function) | Manufacturers | |
TIM1414-4-252 | Microwave Power GaAs FET DataShee datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com et4U.com datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com |
Toshiba |
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TIM1414-4LA | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF |
Toshiba Semiconductor |
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TIM1414-4LA | Microwave Power GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE R |
Toshiba |
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TIM1414-4LA-371 | Microwave Power GaAs FET DataShee datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com et4U.com datasheet39.comom datasheet39.comom datasheet39.comom DataSheet 4 U .com |
Toshiba |
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TIM1414-10A | Microwave Power GAAS Fet TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed pa |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |