No | Part number | Description ( Function ) | Manufacturers | |
2 | TIM1414-2 | Microwave Power GaAs FET TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB Compression Po |
Toshiba |
|
1 | TIM1414-2-252 | Microwave Power GaAs FET DataShee DataSheet DataSheet DataSheet DataSheet 4 U .com et DataSheet DataSheet DataSheet DataSheet 4 U .com |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |