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Datasheet TIM1011-8L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIM1011-8L | MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz BROAD |
Toshiba Semiconductor |
TIM1011 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIM1011-8L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM1011-5L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM1011-4L | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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