No | Part number | Description ( Function ) | Manufacturers | |
1 | TIM1011-2L | MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Pow |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TIM1011-2L |
Part No | Description ( Function) | Manufacturers | |
PT10112 | (PT10112 / PT10116) DIODE MODULE DIODE MODULE FEATURES * Isolated Base * 3 Phase Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 100A/1200V/1600V PT10112 PT10116 OUTLINE DRAWING ネジ TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reve |
Nihon Inter Electronics |
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PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitri |
Ericsson |
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S10112 | (S10111 - S10114) Current-output type sensors CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power c |
Hamamatsu |
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TIM1011-4L | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFOR |
Toshiba Semiconductor |
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TIM1011-5L | MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-5L HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE R |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |