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TIM1011-2L PDF Datasheet

The TIM1011-2L is MICrowave Power Gaas Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TIM1011-2L
MICROWAVE POWER GaAs FET

TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Pow

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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DIODE MODULE FEATURES * Isolated Base * 3 Phase Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 100A/1200V/1600V PT10112 PT10116 OUTLINE DRAWING ネジ TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reve

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PTF10112   60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitri

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Hamamatsu
Hamamatsu
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TIM1011-4L   MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFOR

Toshiba Semiconductor
Toshiba Semiconductor
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TIM1011-5L   MICROWAVE POWER GaAs FET

TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-5L HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ R

Toshiba Semiconductor
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[1]    

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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