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TIC246C PDF Datasheet

The TIC246C is (tIC246x) SilICon Bidirectional Triode Thyristor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TIC246C
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (tri

Comset Semiconductors
Comset Semiconductors
pdf

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Recommended search results related to TIC246C

Part No Description ( Function) Manufacturers PDF
TIC246   SILICON TRIACS

TIC246 SERIES SILICON TRIACS Copyright © 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000 G G G G G G High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in ele

Power Innovations Limited
Power Innovations Limited
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TIC246B   (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125

Comset Semiconductors
Comset Semiconductors
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TIC246D   Triacs

INCHANGE Semiconductor isc Triacs isc Product Specification TIC246D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM Tj Tstg Rth(

Inchange Semiconductor
Inchange Semiconductor
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TIC246D   SILICON TRIACS

TIC246 SERIES SILICON TRIACS Copyright © 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000 G G G G G G High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in ele

Power Innovations Limited
Power Innovations Limited
datasheet pdf
TIC246D   (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125

Comset Semiconductors
Comset Semiconductors
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