Datasheet TIC226M Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	TIC226M	Triacs INCHANGE Semiconductor isc Triacs isc Product Specification TIC226M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a) Repet	Inchange Semiconductor	triac
2	TIC226M	TIRISTORI TIRISTORI I TRIJACI TIR TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR UDRM ITAV IGT Tip Cena URRM Case (V) (A) (mA) BT136 1,20 600 4 20 TO220C BT137 1,50 600 8 20 TO220C BT138 1,80 600 12 30 TO220C TO220C BT139 2,00 600 16 30 TO220C BTA04 2,50 600 4	M&G Electronic	data
3	TIC226M	SILICON TRIACS TIC226 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical cont	Power Innovations Limited	triac
4	TIC226M	Silicon Triacs TIC226 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2	Loras Industries	triac
5	TIC226M	SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and hig	Comset Semiconductor	thyristor

TIC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	TIC106	SILICON CONTROLLED RECTIFIERS TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q q 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW)	Power Innovations Limited	rectifier
2	TIC106	Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220	New Jersey Semiconductor	thyristor
3	TIC106A	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS	Texas	thyristor
4	TIC106A	(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance t	Comset Semiconductors	thyristor
5	TIC106A	Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220	New Jersey Semiconductor	thyristor
6	TIC106B	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS	Texas	thyristor
7	TIC106B	(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance t	Comset Semiconductors	thyristor

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Número de pieza	Descripción	Fabricantes	PDF
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