Datasheet THN6501F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	THN6501F	SiGe NPN Transistor Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V, IC = 30 mA THN6501	AUK

THN65 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
THN6501F	SiGe NPN Transistor Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V,	AUK
THN6501	SiGe NPN Transistor Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 m	AUK

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