No | Part number | Description ( Function ) | Manufacturers | |
1 | TH58NVG7D2GTA20 | 128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (8G 8 BIT 2) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TH58NVG7D2G is a single 3.3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes 256 pages 8248 b |
Toshiba |
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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