No | Part number | Description ( Function ) | Manufacturers | |
1 | TH58NVG4S0FBAID | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which a |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
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TH58NVG4S0FTA20 | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (409 |
Toshiba Semiconductor |
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TH58NVG4S0FTAK0 | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM TH58NVG4S0FTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (409 |
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TH58NVG4S0HTA20 | 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM TH58NVG4S0HTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0HTA20 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized a |
Toshiba |
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TH58NVG4S0HTAK0 | 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM TH58NVG4S0HTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0HTAK0 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized a |
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2N5840 | HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
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