No | Part number | Description ( Function ) | Manufacturers | |
1 | TH58NVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI4 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. The device has two 4352-byte static registers which |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TH58NVG3S0HBAI4 |
Part No | Description ( Function) | Manufacturers | |
TH58NVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4 |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |