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TH58NVG2S3BTG00 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 TH58NVG2S3BTG00
4-Gbit CMOS NAND EPROM

TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION Lead-Free The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks. The device has a 2112-byte static r

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TH58NVG2S3BTG Data sheets

Part No Description ( Function) Manufacturers PDF
TH58NVG2S3BTG00   4-Gbit CMOS NAND EPROM

TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION Lead-Free The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2

Toshiba
Toshiba
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