No | Part number | Description ( Function ) | Manufacturers | |
1 | TH58BVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows p |
Toshiba |
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Recommended search results related to TH58BVG3S0HTA00 |
Part No | Description ( Function) | Manufacturers | |
TH58BVG3S0HTAI0 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM TH58BVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTAI0 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (40 |
Toshiba |
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