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Datasheet TGF4230 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | TGF4230 | 1.2mm Discrete HFET T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C .
TGF4230-EEU
1.2mm Discrete HFET
q q q q q q
PHOTO ENLARGEMENT
1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz
4230
Suitable for High-Relia |
TriQuint Semiconductor |
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2 | TGF4230-EEU | 1.2mm Discrete HFET T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C .
TGF4230-EEU
1.2mm Discrete HFET
q q q q q q
PHOTO ENLARGEMENT
1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz
4230
Suitable for High-Relia |
TriQuint Semiconductor |
|
1 | TGF4230-SCC | 1.2 mm HFET Product Data Sheet
December 16, 2002
DC - 12 GHz Discrete HFET
TGF4230-SCC
Key Features and Performance
• • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias a |
TriQuint Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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