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Datasheet TGF2120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TGF2120   1200um Discrete GaAs pHEMT

Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2120 1200um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  31 dBm Typical Output Power - P1dB  11 dB Typical Gain @ 12 GHz  57% Typical PAE @
TriQuint Semiconductor
TriQuint Semiconductor
datasheet TGF2120 pdf

TGF2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TGF2023-2-02

12 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 3
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor
TGF2023-2-10

50 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 -
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor
TGF2023-2-05

25 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 43 dBm Nominal PSAT at 3 GHz • 78.3% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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