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TGF2023-2-05 PDF Datasheet

The TGF2023-2-05 is 25 Watt Discrete Power Gan On SIC Hemt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 43 dBm Nominal PSAT at 3 GHz • 78.3% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 100 - 500 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 1.44 x 0.10 mm Fun

TriQuint Semiconductor
TriQuint Semiconductor
pdf

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Recommended search results related to TGF2023-2-05

Part No Description ( Function) Manufacturers PDF
TGF2023-2-01   6 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 38 dBm Nominal PSAT at 3 GHz • 71.6% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V

TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf
TGF2023-2-02   12 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 3

TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf
TGF2023-2-10   50 Watt Discrete Power GaN on SiC HEMT

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 -

TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf
TGF2023-2-20   90 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE 19.2 dB Nominal Power Gain at 3 GHz Bias: VD

TriQuint
TriQuint
datasheet pdf

[1]    

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