No | Part number | Description ( Function ) | Manufacturers | |
1 | TGF2023-2-05 | 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 43 dBm Nominal PSAT at 3 GHz • 78.3% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 100 - 500 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 1.44 x 0.10 mm Fun |
TriQuint Semiconductor |
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Recommended search results related to TGF2023-2-05 |
Part No | Description ( Function) | Manufacturers | |
TGF2023-2-01 | 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 38 dBm Nominal PSAT at 3 GHz • 71.6% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V |
TriQuint Semiconductor |
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TGF2023-2-02 | 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 3 |
TriQuint Semiconductor |
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TGF2023-2-10 | 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - |
TriQuint Semiconductor |
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TGF2023-2-20 | 90 Watt Discrete Power GaN on SiC HEMT TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE 19.2 dB Nominal Power Gain at 3 GHz Bias: VD |
TriQuint |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |