Datasheet TGA4509-SM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TGA4509-SM	Ka-Band Packaged 1W PA Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA Key Features • • • • • • TGA4509-SM Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA (Id = 800mA under RF drive) Compact 4 x 4 QFN with 20 leads Package Dim	TriQuint Semiconductor

TGA4509 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TGA4509	27 - 31 GHz 1W Power Amplifier Product Data Sheet August 5, 2008 27 - 31 GHz 1W Power Amplifier Key Features • • • • • • • • TGA4509 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias Conditions	TriQuint Semiconductor
TGA4509-SM	Ka-Band Packaged 1W PA Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA Key Features • • • • • • TGA4509-SM Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA (Id = 800mA under RF drive) Compact 4 x 4 QFN with	TriQuint Semiconductor
TGA4509-EPU	1W Power Amplifier Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier Key Features • • • • • • • • TGA4509-EPU 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias	TriQuint Semiconductor

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