No | Part number | Description ( Function ) | Manufacturers | |
2 | TGA2625 | GaN Power Amplifier Applications Radar Communications TGA2625 10 – 11GHz 20W GaN Power Amplifier Product Features Frequency Range: 10 – 11GHz PSAT: 43dBm @ PIN = 15dBm P1dB: >40dBm PAE: >42% @ PIN = 15dBm Large Signal Gain: 28dB Small Signal Gain: 37dB Return Loss: >11dB Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical Pulsed VD: PW = 100us and DC = |
TriQuint Semiconductor |
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1 | TGA2625-CP | GaN Power Amplifier Applications Radar Communications TGA2625-CP 10 to 11 GHz, 17 W GaN Power Amplifier Product Features Frequency Range: 10 – 11 GHz Pout: 42.5 dBm (at PIN = 15 dBm) PAE: > 40 % Power Gain: 28 dB (at PIN = 15 dBm) Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %) Package Dimensions: 15.2 x 15.2 x 3.5 mm Pac |
TriQuint Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |