No | Part number | Description ( Function ) | Manufacturers | |
1 | TGA2590-CP | 30W GaN Power Amplifier Applications Electronic Warfare Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features Frequency Range: 6 - 12 GHz POUT: > 45 dBm (PIN = 23 dBm) PAE: > 30 % (PIN = 23 dBm) Small Signal Gain: 35 dB Bias: VD = 20 V (CW), IDQ = 2 A, VG = −2.4 V typ. Package Dimensions: 15.24 x 15.24 x 3.5 mm Functional Blo |
TriQuint Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
TGA2590 | 30W GaN Power Amplifier Applications Electronic Warfare Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features Frequency Range: 6 - 12 GHz Output Power: > 45 dBm (PIN = 23 dBm) PAE: > 25 % (PIN = 23 dBm) Large Signal Gain: > 22.0 dB VD = 20 |
TriQuint Semiconductor |
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259001 | Hazardous Area Fuses Next Previous Hazardous Area Fuses Barrier Network Fuse 242 Series • Meets Barrier Network Standards (EN50020) for hazardous applications. • High interrupting rating. Meets the 1500A minimum. • Available in both axial lead and surface mount. ELECTRICAL CHARACTERISTICS: |
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2SC2590 | Silicon NPN epitaxial planar type Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-ba |
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2SC2590 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency f |
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