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TGA2590-CP PDF Datasheet

The TGA2590-CP is 30w Gan Power Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TGA2590-CP
30W GaN Power Amplifier

Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  POUT: > 45 dBm (PIN = 23 dBm)  PAE: > 30 % (PIN = 23 dBm)  Small Signal Gain: 35 dB  Bias: VD = 20 V (CW), IDQ = 2 A, VG = −2.4 V typ.  Package Dimensions: 15.24 x 15.24 x 3.5 mm Functional Blo

TriQuint Semiconductor
TriQuint Semiconductor
pdf

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Recommended search results related to TGA2590-CP

Part No Description ( Function) Manufacturers PDF
TGA2590   30W GaN Power Amplifier

Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  Output Power: > 45 dBm (PIN = 23 dBm)  PAE: > 25 % (PIN = 23 dBm)  Large Signal Gain: > 22.0 dB  VD = 20

TriQuint Semiconductor
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259001   Hazardous Area Fuses

Next Previous Hazardous Area Fuses Barrier Network Fuse 242 Series • Meets Barrier Network Standards (EN50020) for hazardous applications. • High interrupting rating. Meets the 1500A minimum. • Available in both axial lead and surface mount. ELECTRICAL CHARACTERISTICS:

Littelfuse
Littelfuse
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259001   Hazardous Area Fuses

Next Previous Hazardous Area Fuses Barrier Network Fuse 242 Series • Meets Barrier Network Standards (EN50020) for hazardous applications. • High interrupting rating. Meets the 1500A minimum. • Available in both axial lead and surface mount. ELECTRICAL CHARACTERISTICS:

Littelfuse
Littelfuse
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2SC2590   Silicon NPN epitaxial planar type

Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-ba

Panasonic Semiconductor
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2SC2590   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency f

SavantIC
SavantIC
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