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TGA1319B PDF Datasheet

The TGA1319B is Ka Band Low Noise Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TGA1319B
Ka Band Low Noise Amplifier

Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319B Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 1.75 dB Nominal Noise Figure 19 dB Nominal Gain 8dBm Pout 3V, 45 mA Self -biased Point-to-Point Radio Point-to-Multipoint Communications 5 0 -5 Chip Dimensions 2.235 mm x 1.145 mm Preliminary D

TriQuint Semiconductor
TriQuint Semiconductor
pdf

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Recommended search results related to TGA1319B

Part No Description ( Function) Manufacturers PDF
TGA1319A   Ka Band Low Noise Amplifier

Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain 12 dBm Pout 3V, 45 mA Chip Dimensions 1.985 mm x

TriQuint Semiconductor
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TGA1319C   Ka Band Wideband LNA/Driver

Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband 21 dB Nominal Gain 14 dBm Pout 5V, 60 mA Chip Dimension

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1319   High Speed Lightwave Receiver

Data Sheet July 2000 1319-Type High-Speed Lightwave Receiver Features s s s High data rate capability: 2.5 Gbits/s APD or PIN photodetector Fully operational through the 1.3 µm to 1.55 µm wavelength range Typical sensitivity: — –34 dBm with APD — –25 dBm with pin >25

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2SA1319   High-Voltage Switching Applications

Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensio

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