| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | TGA1135B | 18-27.5 GHz 1W Power Amplifier Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications • Point-to-Point Radio � |
 TriQuint Semiconductor |
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| 1 | TGA1135B-SCC | 18-27 GHz 1W Power Amplifier Product Datasheet February 14, 2008 18-27 GHz 1W Power Amplifier Key Features • • • • • • • TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Primary Applications • • • Point- |
TriQuint Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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