No | Part number | Description ( Function ) | Manufacturers | |
1 | TFMAJ11A | GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION TVS TFMAJ SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excellent clamping capability Low zener impedance Fast response time DO-214AC Ratings at 25 o C ambient |
Rectron Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TFMAJ11A |
Part No | Description ( Function) | Manufacturers | |
TFMAJ11 | GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION TVS TFMAJ SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excell |
Rectron Semiconductor |
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TFMAJ110 | GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION TVS TFMAJ SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excell |
Rectron Semiconductor |
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TFMAJ110A | GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION TVS TFMAJ SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excell |
Rectron Semiconductor |
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011N40P1 | KHB011N40P1 datasheet39.com SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, |
KEC |
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015AZ11 | Silicon Epitaxial Planar Type Diode 015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation |
Toshiba Semiconductor |
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