No | Part number | Description ( Function ) | Manufacturers | |
1 | TF44016C | Fast Switching Thyristor TF440..C TF440..C Fast Switching Thyristor Replaces March 1998 version, DS4272- 2.3 DS4272-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 400A ITSM 4000A dV/dt 200V/µs dI/dt 500A/µs tq 50µs FEATURES s Double Side Cooling s High Surge Capab |
Dynex Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TF44016C |
Part No | Description ( Function) | Manufacturers | |
GLT44016 | 256K X 16 CMOS DYNAMIC RAM G -LINK GLT44016 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug, 2000(Rev.3.1) Features : ∗ ∗ ∗ ∗ ∗ ∗ ∗ 262,144 words by 16 bits organization. Fast access time and cycle time. Dual CAS Input. Low power dissipation. Read-Modify-Write, |
G-Link |
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TF44014C | Fast Switching Thyristor TF440..C TF440..C Fast Switching Thyristor Replaces March 1998 version, DS4272- 2.3 DS4272-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 400A |
Dynex Semiconductor |
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TF44018C | Fast Switching Thyristor TF440..C TF440..C Fast Switching Thyristor Replaces March 1998 version, DS4272- 2.3 DS4272-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2000V IT(RMS) 400A |
Dynex Semiconductor |
|
UPD444016 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT DATA SHEET MOS INTEGRATED CIRCUIT µPD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 4 |
NEC |
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UPD444016-Y | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |