TDA9935 PDF Datasheet

TDA9935 Rev. 04 — 17 September 2007 Dual 14-bit, up to 160 Msample/s, 2 × interpolating Digital-to-Analog Converter (DAC) Product data sheet 1. General description The TDA9935 is optimized to reduce architecture complexity and overall system cost. Thanks to its direct IF conversion capabilities, it leads dynamic performance in multi-carrier support. Wi

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • Pin Description 5 / 5 / ! "  & % $ # , , , , -20V/-6A, RDS(ON)=45mΩ(max.) @ VGS=-4.5V RDS(ON)=65mΩ(max.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and

APM9935K Dual P-Channel Enhancement Mode MOSFET Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V Pin Description D1 D1 D2 D2 • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Comp

Overcurrent Protection Leaded Disks, Coated, 12 V Applications I Overcurrent and short-circuit protection B599*5 C 935 … C 995 b 3,5 max. Features I Lead-free terminals I Manufacturer’s logo and type designation I I I I I stamped on in yellow Low resistance For rated cur

CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead f