No | Part number | Description ( Function ) | Manufacturers | |
1 | TCSCS1E156XCAR | Manganese Dioxide Type Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimension Normal type L W1 Z Z Face - down type L W2 H W1 Z Z W2 Unit : mm H Case Code U I J K K R P P S A T B C D EIA Code 1005 1005 1608 -10 1608 -9 1608 -9 2012L 2012 2012 3216L 3216 3528L 3528 6032 7343 L 1.0 0.2 1.0 0. |
Samsung |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TCSCS1E156XCAR |
Part No | Description ( Function) | Manufacturers | |
TCSCS1E156xDAR | Manganese Dioxide Type Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimension Normal type L W1 Z Z Face - down type L W2 H W1 Z Z W2 Unit : mm H Case Code U I J K K R P P S A T B C D EIA Code |
Samsung |
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2SA1156 | PNP SILICON POWER TRANSISTOR |
NEC |
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2SB1156 | Silicon PNP epitaxial planar type(For power switching) Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base volta |
Panasonic Semiconductor |
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2SB1156 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications |
SavantIC |
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2SC1156 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1156 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN 1 |
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Vishay |
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