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TCSCS1C336XBAR PDF Datasheet

The TCSCS1C336XBAR is Manganese Dioxide Type. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TCSCS1C336XBAR
Manganese Dioxide Type

Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimension Normal type L W1 Z Z Face - down type L W2 H W1 Z Z W2 Unit : mm H Case Code U I J K K R P P S A T B C D EIA Code 1005 1005 1608 -10 1608 -9 1608 -9 2012L 2012 2012 3216L 3216 3528L 3528 6032 7343 L 1.0 0.2 1.0 0.

Samsung
Samsung
pdf

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Recommended search results related to TCSCS1C336XBAR

Part No Description ( Function) Manufacturers PDF
TCSCS1C336xCAR   Manganese Dioxide Type

Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimension Normal type L W1 Z Z Face - down type L W2 H W1 Z Z W2 Unit : mm H Case Code U I J K K R P P S A T B C D EIA Code

Samsung
Samsung
datasheet pdf
TCSCS1C336xDAR   Manganese Dioxide Type

Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimension Normal type L W1 Z Z Face - down type L W2 H W1 Z Z W2 Unit : mm H Case Code U I J K K R P P S A T B C D EIA Code

Samsung
Samsung
datasheet pdf
2SD1336   Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching A

Inchange Semiconductor
Inchange Semiconductor
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2SK1336   Silicon N-Channel MOS FET

2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and sol

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
6EP1336-1SH01   SITOP Power Supplies

SITOP Power Supplies SITOP Power Single-Phase Dimensions L1N Input AC 120/230V SIEMENS 3.54 (90) L+L+M+M Output DC 24V/1,3A L1N Input AC 120/230V SIEMENS L+L+M+M Output DC 24V/1,3A 3.54 (90) LOGO 1 Power 1.3 x2 34 LOGO! Power 2,5 x2 34 2.80 (72) 2.0

Siemens
Siemens
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