No | Part number | Description ( Function ) | Manufacturers | |
1 | TCD2558D | CCD Linear Image Sensor TCD2558D Preliminary TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2558D The TCD2558D is a high sensitive and low dark current 5340 elements × 3 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor can be used for image scanner. The device contains a row of 5340 × 3 photodiodes, which provide a 24 lin |
Toshiba Semiconductor |
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2N2558 | PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1038, 2N1039*. ?N1040- 2N1041* 2N2552, 2N2553*, 2N2554, 2N2555* 2N2556,, 2N2557*, 2N2558, 2N2559* TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 A B C PNP GERMANIUM ALLOY JUNCTION POWER These hermetically sealed a |
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2SC2558 | HG RF POWER TRANSISTOR HG Semiconductors HG RF POWER TRANSISTOR 2SC2558 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors 2SC2558HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN |
HGSemi |
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2SD2558 | Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose) Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MH |
Sanken electric |
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APM2558NU | N-Channel Enhancement Mode MOSFET APM2558NU N-Channel Enhancement Mode MOSFET Features • 25V/60A, RDS(ON)=4.5mΩ (Typ.) @ VGS=10V RDS(ON)=7.5mΩ (Typ.) @ VGS=4.5V Pin Description G D S • • • • Super High Dense Cell Design Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available |
Anpec Electronics Coropration |
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