No | Part number | Description ( Function ) | Manufacturers | |
1 | TC59LM836DMB | Network FCRAM ( DataSheet : ) TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 2,097,152-WORDS × 4 BANKS × 36-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DMB is organized as 2,097,152-words |
Toshiba Semiconductor |
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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