No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58NVG5D2FTAI0 | 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5D2FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG5D2 is a single 3.3 V 32 Gbit (36,274,176,000 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 4100 blocks. Th |
Toshiba |
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Recommended search results related to TC58NVG5D2FTAI0 |
Part No | Description ( Function) | Manufacturers | |
TC58NVG5D2FTA00 | 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5D2FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG5D2 is a single 3.3 V 32 Gbit (36,274,176,000 bits) NAND Electrically Erasable and Program |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |