No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58NVG1S3HTA00 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. The device has two 2176-byte static registers whic |
Toshiba |
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Recommended search results related to TC58NVG1S3HTA00 |
Part No | Description ( Function) | Manufacturers | |
TC58NVG1S3HTAI0 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM TC58NVG1S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HTAI0 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as |
Toshiba |
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