No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58NVG0S3HTAI0 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM TC58NVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks. The device has a 2176-byte static registers which al |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC58NVG0S3HTAI0 |
Part No | Description ( Function) | Manufacturers | |
SY58030U | ULTRA PRECISION DIFFERENTIAL LVPECL 4:1 MUX Micrel ULTRA PRECISION, 400mV SY58030U Precision Edge™ DIFFERENTIAL LVPECL 4:1 MUX with 1:2 SY58030U FANOUT and INTERNAL TERMINATION Precision Edge™ FEATURES s Selects 1 of 4 differential inputs s Provides two copies of the selected input s Guaranteed |
Micrel Semiconductor |
|
TC58NVG0S3HTA00 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2 |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |