No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58BVG2S0HTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58BVG2S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG2S0HTA00 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC58BVG2S0HTA00 |
Part No | Description ( Function) | Manufacturers | |
CXK582000M | 262144-word X 8-bit High Speed CMOS Static RAM CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention st |
Sony Corporation |
|
CXK582000M-10LL | 262144-word X 8-bit High Speed CMOS Static RAM CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention st |
Sony Corporation |
|
CXK582000M-85LL | 262144-word X 8-bit High Speed CMOS Static RAM CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention st |
Sony Corporation |
|
CXK582000TM | 262144-word X 8-bit High Speed CMOS Static RAM CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention st |
Sony Corporation |
|
CXK582000TM-10LL | 262144-word X 8-bit High Speed CMOS Static RAM CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention st |
Sony Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |