No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58BVG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows |
Toshiba |
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Recommended search results related to TC58BVG2S0HBAI4 |
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TC58BVG2S0HBAI6 | 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as ( |
Toshiba |
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