No | Part number | Description ( Function ) | Manufacturers | |
1 | TC58BVG0S3HTA00 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM TC58BVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows |
Toshiba |
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Recommended search results related to TC58BVG0S3HTA00 |
Part No | Description ( Function) | Manufacturers | |
TC58BVG0S3HTAI0 | 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as ( |
Toshiba |
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