No | Part number | Description ( Function ) | Manufacturers | |
1 | TC531000AF | CMOS MASK ROM TOSHIBA MOS MEMORY PRODUCT 1 M BIT (128K WORD X 8 Bin CMOS MASK ROM SILICON GATE CMOS TC531000AP TC531000AF OESCRI PTI UN The TC531000AP/AF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program marnory of microprocesGor, especially character generator. The TC53l000AP/AF using CMOS technology is m |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC531000AF |
Part No | Description ( Function) | Manufacturers | |
TC531000AP | CMOS MASK ROM TOSHIBA MOS MEMORY PRODUCT 1 M BIT (128K WORD X 8 Bin CMOS MASK ROM SILICON GATE CMOS TC531000AP TC531000AF OESCRI PTI UN The TC531000AP/AF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program mar |
Toshiba |
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HY531000A | 1M X 1 Fast Page Mode HY531000A 1Mx1, Fast Page mode DESCRIPTION This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process desi |
Hynix Semiconductor |
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LH531000B | CMOS 1M (128K x 8) MROM LH531000B FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.) • Programmable CE/OE/OE • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V po |
Sharp Electrionic Components |
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LH531000B-S | CMOS 1M (128K x 8) 3 V-Drive MROM LH531000B-S FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW (MAX.) • Mask-programmable control pin: Pin 20 = CE/OE/OE • Static operation • Three-state outputs • Low power sup |
Sharp Electrionic Components |
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SN531000 | Solid State Relays |
Celduc |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |