No | Part number | Description ( Function ) | Manufacturers | |
1 | TC518512TRL-70LV | SILICON GATE CMOS PSEUDO STATIC RAM TOSHIBA TC518512PL/FL/FIL!fRL70LV/80LV/I0LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage. The TC518 |
Toshiba |
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Part No | Description ( Function) | Manufacturers | |
TC518512TRL-70 | SILICON GATE CMOS PSEUDO STATIC RAM TOSHIBA TC518512PL/FL/FIL/TRL-70/00/10 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with |
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TC518512TRL-70DR | SILICON GATE CMOS PSEUDO STATIC RAM rOSHIBA TC518512PL/FL/FIL/TRL-70(DR) /80 (DR) /10 (DR) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic m |
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TC518512TRL-70LT | SILICON GATE CMOS PSEUDO STATIC RAM rOSHIBA TC518512PL/FL/FIL/TRL-70(Ln/80(Ln /10(Ln SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |