No | Part number | Description ( Function ) | Manufacturers | |
1 | TC514256Z-85 | DRAM TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256P/J/Z-l0 TC514256P/J/Z-12 The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit. The TCs142s6P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC514256Z-85 |
Part No | Description ( Function) | Manufacturers | |
TC514256Z-10 | DRAM TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256P/J/Z-l0 TC514256P/J/Z-12 The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit. The TCs142s6P/J/Z utilizes TOSHIBA's CMOS Silic |
Toshiba |
|
TC514256Z-12 | DRAM TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256P/J/Z-l0 TC514256P/J/Z-12 The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit. The TCs142s6P/J/Z utilizes TOSHIBA's CMOS Silic |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |