No | Part number | Description ( Function ) | Manufacturers | |
1 | TC2998F | GaAs Power FETs - Preliminary Datasheet - TC2998F PRE.3_01/21/2008 2.7-2.9GHz 20W Packaged GaAs Power FETs FEATURES 20 W Typical Power 10 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998F is a packaged Pseudomorphic High Electron Mobility T |
Transcom |
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Recommended search results related to TC2998F |
Part No | Description ( Function) | Manufacturers | |
TC2998E | GaAs Power FETs www.DataSheet4U.net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs FEATURES 20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 |
Transcom |
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1N2998 | (1N2970 - 1N2999) 10W Zener Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
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1N2998A | Diode Zener Single 52V 10% 10W 2-Pin DO-4 |
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1N2998B | Silicon 10 WATT Zener Diodes |
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