No | Part number | Description ( Function ) | Manufacturers | |
1 | TC2996D | 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 30 mm • 100 % DC and RF Tested PHOTO E |
Transcom |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC2996D |
Part No | Description ( Function) | Manufacturers | |
LTC2996 | Temperature Sensor LTC2996 Temperature Sensor with Alert Outputs Features Converts Remote or Internal Diode Temperature to Analog Voltage n Adjustable Overtemperature and Undertemperature Thresholds n Voltage Output Proportional to Temperature n ±1°C Remote Temperature Accuracy n ±2°C Int |
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TC2996A | GaAs Power FETs www.DataSheet4U.net TC2996A REV1_20070503 1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.6 GHz • 13 dB Typical Linear Power Gain at 1.6 GHz • High Linearity:IP3 = 50 dBm Typical • High Power Added Efficiency:Nominal PAE of 40 % |
Transcom |
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TC2996B | GaAs Power FETs www.DataSheet4U.net TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.9 GHz • 13 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % |
Transcom |
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1N2996 | (1N2970 - 1N2999) 10W Zener Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
America Semiconductor |
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1N2996 | Diode Zener Single 50V 20% 10W 2-Pin DO-4 |
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