No | Part number | Description ( Function ) | Manufacturers | |
1 | TC220E | (TC220C/E) DRAM Core TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applications through utilization of different core configurations. w DRAM Core Features w • Power supply: 3.3V ±0.3V • M |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to TC220E |
Part No | Description ( Function) | Manufacturers | |
GTC220E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2006/09/13 REVISED DATE : GTC220E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 5A The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-eff |
GTM |
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IXYS Corporation |
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Inchange Semiconductor |
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Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |