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TC220E PDF Datasheet

The TC220E is (tc220c/e) Dram Core. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 TC220E
(TC220C/E) DRAM Core

TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applications through utilization of different core configurations. w DRAM Core Features w • Power supply: 3.3V ±0.3V • M

Toshiba
Toshiba
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ISSUED DATE :2006/09/13 REVISED DATE : GTC220E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 5A The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-eff

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2200 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High volta

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2202 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High volta

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[1]    

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