TC110 PDF Datasheet

TC110 PFM/PWM Step-Up DC/DC Controller Features • • • • • Assured Start-up at 0.9V 50µA (Typ) Supply Current (fOSC = 100kHz) 300mA Output Current @ VIN ≥ 2.7V 0.5µA Shutdown Mode 100kHz and 300kHz Switching Frequency Options • Programmable Soft-Start • 84% Typical Efficiency • Small Package: 5-Pin SOT-23A General Description The TC110 is a step-up (Boost) s

TC110 PFM/PWM Step-Up DC/DC Controller Features • • • • • Assured Start-up at 0.9V 50µA (Typ) Supply Current (fOSC = 100kHz) 300mA Output Current @ VIN ≥ 2.7V 0.5µA Shutdown Mode 100kHz and 300kHz Switching Frequency Options • Programmable Soft-Start • 84% Typical Efficiency • Small Package: 5-Pin SOT-23A General Description The TC110 i

LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material

LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability

TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 %

TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)