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Datasheet TBS6416B4E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TBS6416B4E | 1M x 16 Bit x 4 Bank Synchronous DRAM M.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control |
 M-tec |
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| 1 | TBS6416B4E | 1M x 16-Bit x 4-Banks SDRAM
M.tec
1M x 16Bit x 4 Banks synchronous DRAM
TBS6416B4E
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows |
M-tec |
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