Datasheet TA4011AFE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TA4011AFE	TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 3.5 mA Wide band: f = 2.4 GHz (3dB down) Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.) Maximum Ratings (Ta = 25°C) Character	Toshiba Semiconductor

TA4011 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TA4011FU	UHF WIDE BAND AMPLIFIER APPLICATIONS TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications TA4011FU Features l Low current: ICC = 3.5 mA l Wide band: f = 2.4 GHz (3dB down) l Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C) We	Toshiba Semiconductor
TA4011AFE	TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 3.5 mA Wide band: f = 2.4 GHz (3dB down) Operating supply voltage: VCC = 1.5~3 V Weight: 0.003 g (typ.) Maximum Ratings (T	Toshiba Semiconductor
TA4011F	UHF WIDE BAND AMPLIFIER APPLICATIONS TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011F UHF Wide Band Amplifier Applications Features · Low current: ICC = 3.5 mA · Wide band: f = 2.4 GHz (3dB down) · Operating supply voltage: VCC = 1.5~3 V TA4011F Maximum Ratings (Ta = 25°C) Weight: 0.014 g	Toshiba Semiconductor

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